features low cost diffused junction low leakage low forward voltage drop high current capability mechanical data case: jedec do-27,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.041 ounces,1.15 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,50 hz,resistive or inductive load. for capacitive load,derate by 20%. 1n 4139 1n 4141 1n 4142 1n 4143 1n 4144 1n 41 4 5 1n 4146 units maximum recurrent peak reverse voltage v rrm 50 200 400 600 800 1000 1200 v maximum rms voltage v r m s 35 140 280 420 560 700 840 v maximum dc blocking voltage v dc 50 200 400 600 800 10 0 0 12 0 0 v maximum average forward rectified current 9.5m m lead length, @t a =75 peak forward surge current 10ms single half-sine-wave superimposed on rated load @t j =125 maximum instantaneous forward voltage @ 3.0 a v f v maxim um revers e current @t a =25 at rated dc blocking voltage @t a =100 typical junction capacitance (note1) c j pf t y p i c a l t he r m a l r e s i s t a n c e ( n o t e 2 ) r ja / w operating junction temperature range t j storage temperature range t stg a easily cleaned with free, alcohol, isopropanol and s im ilar s olvents 70 p l a s t i c s i l i c o n r e c t i f i e r s v o l t a g e r a n g e : 50 - - - 1 200 v current: 3.0 a do - 2 7 100 maximum ratings and electrical characteristics 1n4139 - - - 1n4146 a 30 0 . 0 i r i fsm i f(av) 1n 4140 100 3 . 0 note: 1.measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. 2.thermal resistance f rom junction to ambient. 100.0 a - 55 ---- + 150 - 55 ---- + 150 1.0 35 10.0 20 dimensions in millimeters diode semiconductor korea www.diode.kr
.2 2 1 .1 4 .4 1 . 0 2 40 10 20 60 100 4102 0 4 0 10 0 f=1mhz t j =25 1 0 100 200 300 400 20 t j =125 ?? 8.3ms single half sine-wave 2 4 10 81 0 0 40 60 80 0 1 2 3 4 0 25 50 75 100 125 150 single phase half wave 60h z resistive or inductive load amperes junction capacitance,pf amperes average forward current amperes fi g. 3 -- peak forward surge current fi g. 4 -- forward deati ng curve ambient temperature, number of cycles at 60hz fi g. 1 -- typi cal forward characteri sti c fi g. 2 -- typi cal juncti on capaci tance 1n4139 - - - 1n4146 i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s r eve r se v o l t a g e , v o l t s peak forward surge current instantaneous forward current 1 . 0 0 . 6 . 0 1 0 . 4 0 . 8 0 . 1 1 . 41 . 2 1 . 6 10 1 . 0 t j =25 c pulse width =300us 0 www.diode.kr diode semiconductor korea
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